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http://lib.kart.edu.ua/handle/123456789/23263
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DC Field | Value | Language |
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dc.contributor.author | Nerubatskyi, Volodymyr | - |
dc.contributor.author | Plakhtii, Oleksandr | - |
dc.contributor.author | Hordiienko, Denys | - |
dc.contributor.author | Khoruzhevskyi, Hryhorii | - |
dc.date.accessioned | 2024-05-28T08:08:02Z | - |
dc.date.available | 2024-05-28T08:08:02Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | Prospects for the development of power electronics by application of technologies for production of power semiconductor switches based on silicon carbide / V. Nerubatskyi, O. Plakhtii, D. Hordiienko, H. Khoruzhevskyi // International scientific journal «Industry 4.0». - 2020. - Vol. 5, Issue 4. - P. 170-173. | uk_UA |
dc.identifier.issn | 2534-997X (online); 2534-8582 (print) | - |
dc.identifier.uri | http://lib.kart.edu.ua/handle/123456789/23263 | - |
dc.description.abstract | The article presents an analysis of the technical characteristics of promising technologies of power transistors based on silicon (Si) and silicon carbide (SiC). A comparative analysis of the energy characteristics of power diodes, MOSFETs and IGBT transistors of various classes based on these technologies is presented. An analysis of current-voltage characteristics and values of static and dynamic power losses in power switches is also given. | uk_UA |
dc.language.iso | en | uk_UA |
dc.publisher | Scientific Technical Union of Mechanical Engineering "Industry 4.0" | uk_UA |
dc.subject | power electronics | uk_UA |
dc.subject | silicon carbide | uk_UA |
dc.subject | gallium nitride | uk_UA |
dc.subject | technologies | uk_UA |
dc.subject | transistor | uk_UA |
dc.title | Prospects for the development of power electronics by application of technologies for production of power semiconductor switches based on silicon carbide | uk_UA |
dc.type | Article | uk_UA |
Appears in Collections: | 2020 |
Files in This Item:
File | Description | Size | Format | |
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Nerubatskyi.pdf | 1.24 MB | Adobe PDF | View/Open |
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